[GS_C_MS] 2D magnet-based van der Waals heterostructures: fundamental insights in magnetism and spin transport
ABSTRACT
In recent years, the realization of magnetic long-range order in atomically thin 2D materials has shown a big potential in spintronic applications in ultrathin magnets due to the possibility of manipulation of magnetism by external fields, strain or proximity effects in van der Waals (vdW) heterostructures. Specifically, the family of 2D metallic magnets FenGeTe2 (n=3, 4, 5) has attracted a huge attention due to their high Curie temperatures and intriguing properties. A systematic study of the electronic structure and magnetism of FenGeTe2 magnets by ab initio density functional theory, calculations of interatomic exchange interaction parameters and Monte Carlo simulations will be shown highlighting the importance of electron correlation with the aid of dynamical mean field theory, spin-orbit coupling and effects of transition metal doping. Also, results on spin-polarized quantum transport calculations will be presented for PtTe2/Fe4GeTe2/PtTe2 van der Waals heterostructures. The effect of electrode polytypes on spin transport properties will be shown for a vdW heterostructure comprising of a ferromagnetic monolayer of 1T-VSe2 with two structural polytypes (1T and 2H) of TaS2 electrodes. It will be shown that the 1T-device shows superior performance with lower Gilbert damping, reduced critical current density and voltage for magnetization switching, compared to the 2H-device, which requires significantly higher current and voltage. Finally, high-throughput discovery of some new 2D magnets will be presented.
[1] S. Ershadrad, S. Ghosh, D. Wang, Y. Kvashnin, B. Sanyal, J. Phys. Chem. Lett. 13, 4877 (2022)
[2] S. Ghosh, S. Ershadrad, V. Borisov, B. Sanyal, npj comp. mat. 9, 86 (2023)
[3] S. Ghosh, S. Ershadrad, B. Sanyal, 2D materials 11 035002 (2024)
[4] M. Davoudiniya, B. Sanyal, Nanoscale Advances 6, 6278 (2024)
[5] R. Ngaloy et al., ACS Nano 18, 5240 (2024)
[6] M. Davoudiniya, B. Sanyal, npj 2D Mater. Appl. 9, 40 (2025)
[7] S. Ershadrad, B. Sanyal, arXiv:2509.02199
